On Entropy Measures for Crystallographic Structure of Silicon–Carbon Networks

Liqiong P., Hanif M. F., Mahmood H., Siddiqui M. K., Manzoor S., Cancan M.

Polycyclic Aromatic Compounds, cilt.44, sa.1, ss.375-402, 2024 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 44 Sayı: 1
  • Basım Tarihi: 2024
  • Doi Numarası: 10.1080/10406638.2023.2174991
  • Dergi Adı: Polycyclic Aromatic Compounds
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, CAB Abstracts, Chemical Abstracts Core, Communication Abstracts, Food Science & Technology Abstracts, Metadex, Pollution Abstracts, Veterinary Science Database, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.375-402
  • Anahtar Kelimeler: Entropy, degree grounded topological indices, degree based entropy, silicon carbides
  • Van Yüzüncü Yıl Üniversitesi Adresli: Evet

Özet

© 2023 Taylor & Francis Group, LLC.Several graph features have been used to distinguish the construction of entropy-based measurements from the structure of chemical graphs and complicated networks. The graph entropy metric has piqued the interest of scientists due to its possible applicability in a variety of domains. In this paper, we look at the chemical graph of silicon–carbon SiC 3-I and the crystallographic structure of silicon–carbon SiC 3-II. This two-dimensional structure has the potential to revolutionize optoelectronic and electrical technologies as a direct wide band gap semiconducting material. More intriguingly, the semiconducting SiC 3 sheet has a significant visible-light adsorption ability. SiC 3 nanosheets have a wide range of electrical characteristics, making them ideal for nano-electronics and photo-voltaic. This advantageous molecular structure, silicon carbon, is examined. More preciously in this paper, we have computed the entropy measures for SiC 3-I and SiC 3-II based on the topologies indices. Some comparison work is offered in addition to the analytical analysis of the entropy measure of silicon–carbon. Bases on these numerical tables and corresponding graphs we conclude that as entropy measures are the better predicator than the topological indices of physio-chemical properties.