Ayyildiz, E. Et Al. 1999. Dependence of thermal annealing on the density distribution of interface states in Ti/n-GaAs(Te) Schottky diodes. Applied Surface Science , vol.152, no.1 , 57-62.

Ayyildiz, E., Bati, B., Temirci, C., & Türüt, A., (1999). Dependence of thermal annealing on the density distribution of interface states in Ti/n-GaAs(Te) Schottky diodes. Applied Surface Science , vol.152, no.1, 57-62.

Ayyildiz, E. Et Al. "Dependence of thermal annealing on the density distribution of interface states in Ti/n-GaAs(Te) Schottky diodes," Applied Surface Science , vol.152, no.1, 57-62, 1999

Ayyildiz, E. Et Al. "Dependence of thermal annealing on the density distribution of interface states in Ti/n-GaAs(Te) Schottky diodes." Applied Surface Science , vol.152, no.1, pp.57-62, 1999

Ayyildiz, E. Et Al. (1999) . "Dependence of thermal annealing on the density distribution of interface states in Ti/n-GaAs(Te) Schottky diodes." Applied Surface Science , vol.152, no.1, pp.57-62.

@article{article, author={E. Ayyildiz Et Al. }, title={Dependence of thermal annealing on the density distribution of interface states in Ti/n-GaAs(Te) Schottky diodes}, journal={Applied Surface Science}, year=1999, pages={57-62} }