On topological indices of double and strong double graph of silicon carbide Si2C3-I[p,q]


Sardar M. S., Ali M. A., Ashraf F., Cancan M.

Eurasian Chemical Communications, cilt.5, sa.1, ss.37-49, 2023 (Scopus) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 5 Sayı: 1
  • Basım Tarihi: 2023
  • Doi Numarası: 10.22034/ecc.2023.356160.1519
  • Dergi Adı: Eurasian Chemical Communications
  • Derginin Tarandığı İndeksler: Scopus
  • Sayfa Sayıları: ss.37-49
  • Anahtar Kelimeler: Double graph, silicon carbide Si2C3-I[p,q], strong double graph, topological indices
  • Van Yüzüncü Yıl Üniversitesi Adresli: Evet

Özet

Copyright © 2023 by SPC.Silicon is a semiconductor material with several advantages over the other similar materials, such as its low cost, nontoxicity, and almost limitless availability, as well as many years of expertise in its purification, manufacture, and device development. It is used in practical for all of the most recent electrical products. Graph theory can be used to depict a chemical structure, with vertices representing atoms and edges representing chemical bonds. Molecular descriptors are important in mathematical chemistry, particularly in QSPR/QSAR research. In this research, by using two graph operations, namely; double and strong double graph, we computed the closed formulas for some degree-based topological indices of silicon carbide. Furthermore, we also compare topological indices numerically and graphically.