Electrical characteristics of organic/inorganic Pt(II) complex/p-Si semiconductor contacts


İmer A. G. , Temirci C. , Gülcan M. , Sonmez M.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.28, pp.31-36, 2014 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 28
  • Publication Date: 2014
  • Doi Number: 10.1016/j.mssp.2014.03.035
  • Title of Journal : MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Page Numbers: pp.31-36
  • Keywords: Contact, Organic, Rectifier, Schottky, Diode, NONPOLYMERIC ORGANIC-COMPOUND, SCHOTTKY-BARRIER, ELECTRONIC-PROPERTIES, PHOTOVOLTAIC PROPERTIES, DIODE, HEIGHT, FABRICATION, DEPENDENCE, JUNCTIONS, LAYER

Abstract

We produced Pt(II)) complexes using the bidentate ligand N-aminopyrimidine-2-thione (APTH). The optical transmission of thin Pt-APTH films was measured. The optical bandgap of the material was 2.58 eV. With the expectation that it might have semiconductor properties and that the Pt-APTH complex might exhibit rectifier behavior when brought into appropriate contact with a semiconductor, we fabricated Pt-APTH/p-Si contacts by direct addition of a solution of Pt-APTH to the front side of p-Si wafers. Forward bias current-voltage measurements revealed satisfactory rectifying behavior for the Pt-APTH/p-Si contacts, with a mean rectification ratio of 4.40 x 10(2) and a mean barrier height of 0.765 eV. Cheung and Norde functions were used to obtain and verify some electrical characteristics of the contacts. The results obtained from both methods are compared and discussed. (C) 2014 Elsevier Ltd. All rights reserved.