On Ve-Degree and Ev-Degree Based Topological Invariants of Chemical Structures

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Nigar N., Alam S. M., Rasheed M. W., Farahani M. R., Alaeiyan M., Cancan M.

Utilitas Mathematica, cilt.119, ss.25-35, 2024 (Scopus) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 119
  • Basım Tarihi: 2024
  • Doi Numarası: 10.61091/um119-04
  • Dergi Adı: Utilitas Mathematica
  • Derginin Tarandığı İndeksler: Scopus, zbMATH
  • Sayfa Sayıları: ss.25-35
  • Anahtar Kelimeler: Ev-degree, Graphs, Silicon Carbide, Topological indices, Ve-degree
  • Van Yüzüncü Yıl Üniversitesi Adresli: Evet

Özet

In the realm of graph theory, recent developments have introduced novel concepts, notably the νε-degree and εν-degree, offering expedited computations compared to traditional degree-based topological indices (TIs). These TIs serve as indispensable molecular descriptors for assessing chemical compound characteristics. This manuscript aims to meticulously compute a spectrum of TIs for silicon carbide SiC4-I[r, s], with a specific focus on the εν-degree Zagreb index, the νε-degree Geometric-Arithmetic index, the εν-degree Randić index, the νε-degree Atom-bond connectivity index, the νε-degree Harmonic index, and the νε-degree Sum connectivity index. This study contributes to the ongoing advancement of graph theory applications in chemical compound analysis, elucidating the nuanced structural properties inherent in silicon carbide molecules.