JOURNAL OF ELECTRONIC MATERIALS, vol.49, no.10, pp.5698-5704, 2020 (SCI-Expanded)
In this study, Al/p-GaSe/In Schottky diodes (SDs) were fabricated by using ap-type GaSe semiconductor grown by the Brigdman-Stockbarger method. Current-voltage (I-V) measurements of the Al/p-GaSe/In diode were carried out from 100 K to 400 K with steps of 20 K in the +2 V- (-2) V voltage range and in the dark. The characteristic parameters of SDs were calculated from ln(I)-Vcharacteristics according to the thermoionic emission (TE) theory and from modified Norde's functions depending on the sample temperature. The barrier height (BH) values calculated from ln(I)-Vand Norde's functions were in agreement. The values of BH and ideality factor (IF) calculated from ln(I)-Vcharacteristics for the SD ranged from 0.97 eV and 1.01 at 400 K to 0.45 eV and 2.18 at 100 K, respectively. The value of serial resistance (R-s) calculated from modified Norde's functions of the SD decreased with increasing temperature. Also, the reverse bias current value of the Al/p-GaSe/In SD under light illumination was higher than the current value in the dark. Thus, the obtained results show that the prepared Al/p-GaSe/In diode might be used as a photodiode in the optoelectronic applications.