Electrical properties of Al/p-Ge and Al/Methyl Green/p-Ge diodes

Duman S., Turgut G., Ozcelik F. Ş. , GÜRBULAK B.

PHILOSOPHICAL MAGAZINE, vol.95, no.15, pp.1646-1655, 2015 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 95 Issue: 15
  • Publication Date: 2015
  • Doi Number: 10.1080/14786435.2015.1042412
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1646-1655
  • Keywords: organic compound, electrical properties, illumination effect, CURRENT-VOLTAGE CHARACTERISTICS, SCHOTTKY CONTACTS, METAL-SEMICONDUCTOR, TEMPERATURE, TRANSPORT
  • Van Yüzüncü Yıl University Affiliated: No


Methyl green (MG) film has been grown for the first time on p-Ge semiconductor using a simple and low-cost drop coating method. The current-voltage (I-V) characteristics of Al/p-Ge and Al/MG/p-Ge diodes have been investigated in the temperature range of 20-300K. A potential barrier height as high as 0.82eV has been achieved for Al/MG/p-Ge diode, which has high rectification rate, at room temperature. It is seen that the barrier height of the Al/MG/p-Ge diode at the room temperature is larger than that of Al/p-Ge diode and ideality factor value of 1.14 calculated for Al/MG/p-Ge diode is lower than Al/p-Ge diode. The temperature coefficient of barrier height of the Al/MG/p-Ge diode has been calculated as 2.6meV/K. The evaluation of current-voltage characteristics shows that the barrier height of the diode increases with the increasing temperature.