The investigation of the fundamental electrical parameters of Ag/n-Si hybrid structure based on functional organic dye

Mahmood O. H., İmer A. G., Ugur A., Korkut A.

2nd International Congress on Semiconductor Materials and Devices (ICSMD), Ardahan, Türkiye, 28 - 30 Ağustos 2018, cilt.46, ss.6966-6970 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 46
  • Doi Numarası: 10.1016/j.matpr.2021.03.272
  • Basıldığı Şehir: Ardahan
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.6966-6970
  • Anahtar Kelimeler: Organic interface, Barrier height, Series resistance, PHOTOELECTRICAL CHARACTERIZATION, SCHOTTKY DIODES, CURRENT-VOLTAGE, BARRIER HEIGHT, MECHANISM, LAYER, GAAS
  • Van Yüzüncü Yıl Üniversitesi Adresli: Evet

Özet

The electrical parameters of Ag/n-Si contact and the hybrid structure has been investigated due to their possible usage in optoelectronic device applications. In this study, the hybrid structure was fabricated using the brilliant blue film as an organic interlayer formed via spin coating method. The electrical parameters of both devices have been determined and compared using the current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The experimental results confirmed that the barrier height of hybrid structure is considerably affected; and its performance and quality can be modified/controlled by the functional interfacial organic layer. (c) 2021 Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the International Congress on Semiconductor Materials and Devices, ICSMD2018.