Metal/semiconductor contact properties of Al/Co(II)complex compounds


Temirci C. , Gülcan M. , GÖKŞEN K., Sonmez M.

MICROELECTRONIC ENGINEERING, vol.88, no.1, pp.41-45, 2011 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 88 Issue: 1
  • Publication Date: 2011
  • Doi Number: 10.1016/j.mee.2010.08.017
  • Title of Journal : MICROELECTRONIC ENGINEERING
  • Page Numbers: pp.41-45

Abstract

A ligand(N-APTH) and Co(II)complex compound of bidentate ligand which contains a ring of the pyrimidine have been produced. For the optical transmission measurements of the Co(II)complex compound thin films, a UV-Visible (UV-Vis) spectrophotometer was employed. As a result of optical measurements. it was revealed that Co(II)complex compound tends to show a semiconductor characteristic with the bandgap value of 3.46 eV. An attempt has been made to explore the rectifying and ohmic properties of Al/Co(II)complex compound/Cu structures assuming that Co(II)complex compound may exhibit a rectifier or ohmic behavior, depending on the fabrication process, when brought into an appropriate contact with a metal. From current-voltage (I-V) measurements, it was found that the device could show good ohmic and rectifying properties intentionally depending on the experimental process followed during fabrication. (C) 2010 Published by Elsevier B.V.