Structural and electronic properties of zincblende phase of Tl (x) Ga1-x As (y) P1-y quaternary alloys: First-principles study


Gulebaglan S. , Doğan E. , Aycibin M. , Secuk M. N. , Erdinc B. , Akkuş H.

CENTRAL EUROPEAN JOURNAL OF PHYSICS, cilt.11, ss.1680-1685, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 11 Konu: 12
  • Basım Tarihi: 2013
  • Doi Numarası: 10.2478/s11534-013-0314-1
  • Dergi Adı: CENTRAL EUROPEAN JOURNAL OF PHYSICS
  • Sayfa Sayıları: ss.1680-1685

Özet

Using the first-principles band-structure method, we have calculated the structural and electronic properties of zincblende TlAs, TlP, GaAs and GaP compounds and their new semiconductor Tl (x) Ga1-x As (y) P1-y quaternary alloys. Structural properties of these semiconductors are obtained with the Perdew and Wang local-density approximation. The lattice constants of Tl (x) Ga1-x As, Tl (x) Ga1-x P ternary and Tl (x) Ga1-x As (y) P1-y quaternary alloys were composed by Vegard's law. Our investigation on the effect of the doping (Thallium and Arsenic) on lattice constants and band gap shows a non-linear dependence for Tl (x) Ga1-x As (y) P1-y quaternary alloys. The band gap of Tl (x) Ga1-x As (y) P1-y , E (g) (x, y) concerned by the compositions x and y. To our awareness, there is no theoretical survey on Tl (x) Ga1-x As (y) P1-y quaternary alloys and needs experimental verification.