Evolution of Si-O-Si asymmetric stretching mode of SiO2 during Si and Ge nanocrystal formation by sputtering and ion implantation | AVESİS

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Evolution of Si-O-Si asymmetric stretching mode of SiO2 during Si and Ge nanocrystal formation by sputtering and ion implantation

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İmer A. G., yerci s., alagoz A. s., serincan u., Turan R.

XXVIII European Congress on Molecular Spectroscopy (EUCMOS), İstanbul, Turkey, 3 - 08 September 2006, pp.227

Publication Type: Conference Paper / Full Text
City: İstanbul
Country: Turkey
Page Numbers: pp.227
Van Yüzüncü Yıl University Affiliated: No