A NEW APPROXIMATION: FROM BARRIER LOWERING TO INTERFACE STATE DENSITY

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KORKUT A.

Surface Review And Letters, cilt.28, sa.12, ss.21501251-21501252, 2021 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 28 Sayı: 12
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1142/s0218625x21501250
  • Dergi Adı: Surface Review And Letters
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.21501251-21501252
  • Van Yüzüncü Yıl Üniversitesi Adresli: Evet

Özet

In this study, a set of the interface state density formulae was derived from the

Schottky effect. In contrast to conventional approximation, a new approximation for

interface state density formulae give very unusual values in the case of forward bias or

reverse bias. The former interface state density formula contains the oxide thickness in

the metal-semiconductor interface region. Otherwise, the new approximation formulae

do not contain the oxide thickness. They depend on the applied voltage and built-in

potential in the case both bias. Besides, the lowering barrier height, which is called the

Schottky effect, depending on the fraction a couple of the new interface state density

formulae. Moreover, that fraction is inversely proportional to acceptor concentration

and cubic power to depletion length.