Surface Review And Letters, cilt.28, sa.12, ss.21501251-21501252, 2021 (SCI-Expanded)
In this study, a set of the interface state density formulae was derived from the
Schottky effect. In contrast to conventional approximation, a new approximation for
interface state density formulae give very unusual values in the case of forward bias or
reverse bias. The former interface state density formula contains the oxide thickness in
the metal-semiconductor interface region. Otherwise, the new approximation formulae
do not contain the oxide thickness. They depend on the applied voltage and built-in
potential in the case both bias. Besides, the lowering barrier height, which is called the
Schottky effect, depending on the fraction a couple of the new interface state density
formulae. Moreover, that fraction is inversely proportional to acceptor concentration
and cubic power to depletion length.