Akademik Veri Yönetim Sistemi
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.29, sa.9, ss.7750-7755, 2018 (SCI-Expanded)
In this investigation, n-ZnO/p-GaAs structure is prepared by a sol-gel route. ZnO film has wurtzite structure with (101) preferential direction. The nano-sized particles are homogeneously dispersed on the film surface. The root mean square roughness and optical band gap values are determined to be 11.49 nm and 3.272 eV. The electrical study shows that n-ZnO/p-GaAs structure has a rectifying property under the dark. The ideality factor and barrier height of structure are defined to be 1.52 and 0.92 eV, respectively. As a result of present work, n-ZnO/p-GaAs structure can be used in a variety of electronic applications.