Fabrication and characterization of n-ZnO/p-GaAs structure
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.29, sa.9, ss.7750-7755, 2018 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 29 Sayı: 9
- Basım Tarihi: 2018
- Doi Numarası: 10.1007/s10854-018-8771-3
- Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.7750-7755
- Van Yüzüncü Yıl Üniversitesi Adresli: Hayır
Özet
In this investigation, n-ZnO/p-GaAs structure is prepared by a sol-gel route. ZnO film has wurtzite structure with (101) preferential direction. The nano-sized particles are homogeneously dispersed on the film surface. The root mean square roughness and optical band gap values are determined to be 11.49 nm and 3.272 eV. The electrical study shows that n-ZnO/p-GaAs structure has a rectifying property under the dark. The ideality factor and barrier height of structure are defined to be 1.52 and 0.92 eV, respectively. As a result of present work, n-ZnO/p-GaAs structure can be used in a variety of electronic applications.