Evolution of vibrational modes of SiO 2 during the formation of Ge and Si nanocrystals by ion implantation and magnetron sputtering

Gencer Imer A., YERCİ S., Alagoz A., Kulakci M., Serincan U., Finstad T., ...More

Journal of Nanoscience and Nanotechnology, vol.10, no.1, pp.525-531, 2010 (SCI-Expanded) identifier identifier identifier

  • Publication Type: Article / Article
  • Volume: 10 Issue: 1
  • Publication Date: 2010
  • Doi Number: 10.1166/jnn.2010.1728
  • Journal Name: Journal of Nanoscience and Nanotechnology
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.525-531
  • Keywords: Si, Ge, SiO2, SiOx, Nanocrystals, Ion Implantation, Magnetron Sputtering, FTIR, TEM, AMORPHOUS-SILICON DIOXIDE, SIO2-FILMS, MATRIX, SPECTROSCOPY, PHOTOELECTRON, STATES, LAYERS, FILMS
  • Van Yüzüncü Yıl University Affiliated: No