Ev-degree and ve-degree molecular topological properties of silicon carbide structures

Aldemir M. Ş., Cancan M., Ediz S.

3rd International Conference on Pure and Applied Mathematics (ICPAM-VAN 2020), Van, Türkiye, 3 - 05 Eylül 2020, cilt.1, ss.33

  • Yayın Türü: Bildiri / Özet Bildiri
  • Cilt numarası: 1
  • Basıldığı Şehir: Van
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.33
  • Van Yüzüncü Yıl Üniversitesi Adresli: Evet

Özet

Topological indices enable information about the underlying topology of chemical and physical substances. Topological indices are grouped into two categories; degree based and distance based. Degree based topological indices are defined by using classical degree concept in graph theory. Evdegree and ve-degree which have been defined recently are two novel degree concepts in graph theory. Also Ev-degre and ve-degree based topological indices have been defined as parallel to corresponding classical degree based topological indices. Molecular classical degree based topological properties of silicon carbon structures have been investigated recently. In this study we investigate ev-degree and ve-degree molecular topological properties of two silicon carbon structures of Si2C3 − I and Si2C3 − II.