The Schottky barrier height of the rectifying Cu/pyronline-B/p-Si, Au/pyronine-B/p-Si, Sn/pyronine-B/p-Si and Al/pyronine-B/p-Si contacts

CAKAR M., Temirci C., TURUT A.

SYNTHETIC METALS, vol.142, pp.177-180, 2004 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 142
  • Publication Date: 2004
  • Doi Number: 10.1016/j.synthmet.2003.08.009
  • Journal Name: SYNTHETIC METALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.177-180
  • Van Yüzüncü Yıl University Affiliated: Yes

Abstract

The Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Al/pyronine-B/p-Si and Sn/pyronine-B/p-Si Schottky structures have been obtained by sublimation of the organic compound pyronine-B onto the top of p-Si surface. Our goal is to experimentally investigate whether or not a nonpolymeric organic compound as contact to an inorganic semiconductor such as Si can provide the continuous control of the barrier height (BH). The barrier height Phi(bp) values of 0.51, 0.674, 0.75 and 0.79 eV for the Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Al/pyronine-B/P-Si and Sn/pyronine-B/p-Si Schottky structures have obtained from the forward current-voltage (I-V) characteristics. It has been seen that the values of Phi(bp) are significantly larger than those of conventional Schottky diodes. (C) 2003 Elsevier B.V. All rights reserved.