The Schottky barrier height of the rectifying Cu/pyronline-B/p-Si, Au/pyronine-B/p-Si, Sn/pyronine-B/p-Si and Al/pyronine-B/p-Si contacts

CAKAR M., Temirci C., TURUT A.

SYNTHETIC METALS, cilt.142, ss.177-180, 2004 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 142
  • Basım Tarihi: 2004
  • Doi Numarası: 10.1016/j.synthmet.2003.08.009
  • Dergi Adı: SYNTHETIC METALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.177-180
  • Van Yüzüncü Yıl Üniversitesi Adresli: Evet

Özet

The Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Al/pyronine-B/p-Si and Sn/pyronine-B/p-Si Schottky structures have been obtained by sublimation of the organic compound pyronine-B onto the top of p-Si surface. Our goal is to experimentally investigate whether or not a nonpolymeric organic compound as contact to an inorganic semiconductor such as Si can provide the continuous control of the barrier height (BH). The barrier height Phi(bp) values of 0.51, 0.674, 0.75 and 0.79 eV for the Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Al/pyronine-B/P-Si and Sn/pyronine-B/p-Si Schottky structures have obtained from the forward current-voltage (I-V) characteristics. It has been seen that the values of Phi(bp) are significantly larger than those of conventional Schottky diodes. (C) 2003 Elsevier B.V. All rights reserved.