In order to investigate relationship between photovoltaic and diode characteristic parameters, we fabricated four kinds of samples of Sn/p-Si Schottky type photovoltaics using surface treatment by anodic oxidation and chemical etching method. Diode and photovoltaic characteristics of the samples were determined from the current voltage measurements performed in dark and under illumination. Etching time of front surface of the p-Si substrate in HF solution used in the fabrication of Sn/p-Si Schottky type photovoltaics was found to be very influential on diode and photovoltaic parameters. Especially, an etching time of 30 s showed a positive effect both on diode and photovoltaic characteristic parameters. It was also observed that the characteristic parameters of the samples were affected negatively depending on the over-etching time. More importantly, a close relationship between photovoltaic parameters (fill factor, conversion efficiency) and diode parameters (ideality factor, series resistance) was observed. (C) 2016 Elsevier Ltd. All rights reserved.