Değişik Omik Kontak Sıcaklıklarında Tavlanmış Schottky Diyotların Fark Arınma Yük Yoğunluğu Yaklaşımı

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KORKUT A.

GAZI UNIVERSITY JOURNAL OF SCIENCE, cilt.33, sa.2, ss.525-539, 2020 (ESCI) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 33 Sayı: 2
  • Basım Tarihi: 2020
  • Doi Numarası: 10.35378/gujs.548269
  • Dergi Adı: GAZI UNIVERSITY JOURNAL OF SCIENCE
  • Derginin Tarandığı İndeksler: Emerging Sources Citation Index (ESCI), Scopus, Academic Search Premier, Aerospace Database, Aquatic Science & Fisheries Abstracts (ASFA), Communication Abstracts, Compendex, Metadex, Civil Engineering Abstracts, TR DİZİN (ULAKBİM)
  • Sayfa Sayıları: ss.525-539
  • Van Yüzüncü Yıl Üniversitesi Adresli: Evet

Özet

This study aimed to investigate the differential depletion charge density for (Ag, Cu, Ni) /n-Si/Al Schottky diodes which depend on ohmic contact temperatures. Ohmic contact temperature defines the Schottky diode parameters. Furthermore, ohmic temperature is concerned with diode quality. In general, depletion charge density is determined as depending on built-in potential. The differential depletion charge density is smaller than zero-voltage depletion charge density (V = 0, Vbi ≠ 0) in the case of forward bias and higher than the zero-voltage depletion charge density for reverse bias. When the depletion charge density formula was expanded into a series, new equations revealed appreciable results. Boundary-values were found for differential depletion charge density using normal and expanded formulae.