ınternational conferance on physical chemistry and functional materials, Ardahan, Turkey, 28 - 30 August 2018, vol.1, pp.47-51
The electrical characteristics of the hybrid structure based on organic material have gain great of interest. The quality and the performance of the metal-semiconductor device can be improved, and controlled by inserting the organic interfacial layer at the interface. In this study, Ag/n-Si contact and the hybrid structure based on organic interlayer were fabricated using the brilliant blue dye via spin coating method. The electrical parameters of both devices have been investigated, and compared using the current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The ideality factor of devices with and without organic interfacial layer was calculated as 1.63 and 1.61, respectively. The magnitude of barrier height was determined as 0.63 and 0.65 eV for the MS and MIS type structure, respectively. Additionally, the value of series resistance for both diodes was obtained using Cheung and Norde functions. The barrier height was also examined using the C-2-V characteristics for both diodes, and compared with results obtained from I-V data. The experimental results confirmed that the barrier height of hybrid structure is considerably affected by the interfacial organic layer.