PROGRESS OF THEORETICAL PHYSICS, cilt.121, sa.3, ss.593-601, 2009 (SCI-Expanded)
A nonlinear theory of the Gunn effect in GaAs-type semiconductors with negative differential conductivity has been devoleped. The amplitude and the frequency of current oscillations in the second approximation have been found by the method of Bogoliubov-Mitropolski. The dependence of the amplitude of current oscillations on electric field strength has been investigated. The amplitude and frequency of current oscillations on the in here and elsewhere have been calculated in a typical experiment.