Electronic, optical, and thermoelectric properties of vacancy-ordered double perovskite K2SnX6 (X = Cl, Br, I) from first-principle calculations


Zikem A., Baaziz H., Ghellab T., Charifi Z., Soyalp F.

Physica Scripta, vol.99, no.3, 2024 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 99 Issue: 3
  • Publication Date: 2024
  • Doi Number: 10.1088/1402-4896/ad1ad8
  • Journal Name: Physica Scripta
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Chemical Abstracts Core, Compendex, INSPEC, zbMATH
  • Keywords: figure of merit, power factor, seebeck coefficient, solar cell, vacancy ordered double perovskites
  • Van Yüzüncü Yıl University Affiliated: Yes

Abstract

The present study explores the structural, optoelectronic, and thermoelectric properties of potassium tin halide vacancy-ordered double perovskites K2SnX6 (X = Cl, Br, and I) in their stable monoclinic phase. Our study uses first-principles calculations based on density functional theory (DFT). Electronic band structures reveal direct band gaps for K2SnCl6 and K2SnBr6, while K2SnI6 exhibits an indirect band gap. Theoretical computations utilising the modified Becke-Johnson potential (mBJ-GGA) demonstrate that the optical band gaps of K2SnCl6, K2SnBr6, and K2SnI6 decrease in the following order: 2.581 eV, 1.707 eV, and 4.126 eV, respectively. These values render the materials suitable for photovoltaic applications. Analysis of dielectric functions, absorption coefficients, and refractive indices demonstrates their potential as light-absorbing materials. We evaluate the thermoelectric properties, including electronic and lattice thermal conductivities, Seebeck coefficients, and power factors, which lead to favorable thermoelectric performance. The maximum figure of merit (ZT) values of 0.58, 0.69, and 0.50 are achieved for K2SnCl6, K2SnBr6, and K2SnI6, respectively, at 500 K. These findings highlight the potential of these materials for applications in solar cells and thermoelectric devices, emphasising their effectiveness at elevated temperatures.