Electrical properties of Sn/Methyl Violet/p-Si/Al Schottky diodes


Özkartal A., Ameen R. H. H. , Temirci C., TÜRÜT A.

International Congress on Semiconductor Materials and Devices (ICSMD), Konya, Turkey, 17 - 19 August 2017, vol.18, pp.1811-1818 identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 18
  • City: Konya
  • Country: Turkey
  • Page Numbers: pp.1811-1818
  • Keywords: Organic interlayer, Schottky diodes, Methyl-violet, CURRENT-VOLTAGE, CHARACTERISTIC PARAMETERS, INTERFACIAL LAYER, IV PLOT

Abstract

We studied the electrical characteristics of a Schottky diode with organic components Sn/methyl-violet/p-Si/Al. We investigated the diode's current-voltage (I-V), capacitance-voltage (C-V), and capacitance-frequency (C-f). From ln(I)-V plots of the diodes, ideality factor (n) and saturation current (I-0) were calculated. Moreover, the barrier height (Phi(b)) and series resistance (R-S) were calculated with Cheungs' and Norde functions. Results shown that at the methyl-violet layerplayed an important role in electrical properties such as series resistance, barrier height, ideality factor and capacitance. (C) 2019 Elsevier Ltd. All rights reserved.