Electrical properties of Sn/Methyl Violet/p-Si/Al Schottky diodes

Özkartal A., Ameen R. H. H., Temirci C., TÜRÜT A.

International Congress on Semiconductor Materials and Devices (ICSMD), Konya, Türkiye, 17 - 19 Ağustos 2017, cilt.18, ss.1811-1818, (Tam Metin Bildiri) identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 18
  • Basıldığı Şehir: Konya
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.1811-1818
  • Anahtar Kelimeler: Organic interlayer, Schottky diodes, Methyl-violet, CURRENT-VOLTAGE, CHARACTERISTIC PARAMETERS, INTERFACIAL LAYER, IV PLOT
  • Van Yüzüncü Yıl Üniversitesi Adresli: Evet

Özet

We studied the electrical characteristics of a Schottky diode with organic components Sn/methyl-violet/p-Si/Al. We investigated the diode's current-voltage (I-V), capacitance-voltage (C-V), and capacitance-frequency (C-f). From ln(I)-V plots of the diodes, ideality factor (n) and saturation current (I-0) were calculated. Moreover, the barrier height (Phi(b)) and series resistance (R-S) were calculated with Cheungs' and Norde functions. Results shown that at the methyl-violet layerplayed an important role in electrical properties such as series resistance, barrier height, ideality factor and capacitance. (C) 2019 Elsevier Ltd. All rights reserved.